Spin-orbit torque (SOT) is a promising mechanism for writing magnetic memories, while field-effect transistors (FETs) are the gold-standard device for logic operation. The spin-orbit torque field-effect transistor (SOTFET) is a proposed device that couples an SOT-controlled ferromagnet to a semiconducting transistor channel via the transduction in a magnetoelectric multiferroic (MF). This allows the SOTFET to operate as both a memory and a logic device, but its realization depends on the choice of appropriate materials.

This article introduces a circuits model for a proposed spin-based device called a spin-orbit torque field-effect transistor (SOTFET) that can operate as a nonvolatile memory and logic device. The SOTFET utilizes an FET structure with a ferromagnetic-multiferroic (MF) gate-stack that enables read/compute and write functions to be isolated. This is achieved by a combination of a ferromagnetic layer that is programmable via spin-orbit torque coupled to an MF layer that also couples into the gate of a traditional FET.

Stacking order can influence the physical properties of two-dimensional van der Waals materials1,2. Here we applied hydrostatic pressure up to 2 GPa to modify the stacking order in the van der Waals magnetic insulator CrI3. We observed an irreversible interlayer antiferromagnetic-to-ferromagnetic transition in atomically thin CrI3 by magnetic circular dichroism and electron tunnelling measurements. The effect was accompanied by a monoclinic-to-rhombohedral stacking-order change characterized by polarized Raman spectroscopy.

Optical trapping (synonymous with optical tweezers) has become a core biophysical technique widely used for interrogating fundamental biological processes on size scales ranging from the single-molecule to the cellular level. Recent advances in nanotechnology have led to the development of ‘nanophotonic tweezers,’ an exciting new class of ‘on-chip’ optical traps. Here, we describe how nanophotonic tweezers are making optical trap technology more broadly accessible and bringing unique biosensing and manipulation capabilities to biological applications of optical trapping.

There comes a time in each of our lives where we grab a thick section of the morning paper, roll it up and set off to do battle with one of nature's most accomplished aviators-the fly. If, however, instead of swatting we could magnify our view and experience the world in slow motion we would be privy to a world-class ballet full of graceful figure-eight wing strokes, effortless pirouettes, and astonishing acrobatics. After watching such a magnificent display, who among us could destroy this virtuoso? How do flies produce acrobatic maneuvers with such precision?

Fibrin sealants are commonly used in cartilage repair surgeries to adhere cells or grafts into a cartilage defect. Both autologous and commercial allogeneic fibrin sealants are used in cartilage repair surgeries, yet there are no studies characterizing and comparing the mechanical properties of fibrin sealants from all-autologous sources.

Designing an efficient and stable hole transport layer (HTL) material is one of the essential ways to improve the performance of organic-inorganic perovskite solar cells (PSCs). Herein, for the first time, an efficient model of a hole transport material (HTM) is demonstrated by optimized doping of a conjugated polymer TFB (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyl)diphenylamine)]) with a non-hygroscopic p-type dopant F4-TCNQ (2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane) for high-efficiency PSCs.

We have studied the low temperature electrical transport properties of LaxSr1-xCuO2 thin films grown by oxide molecular beam epitaxy on (1 1 0) GdScO3 and TbScO3 substrates. The transmission electron microscopy measurements and the x-ray diffraction analysis confirmed the epitaxy of the obtained films and the study of their normal state transport properties, removing the ambiguity regarding the truly conducting layer, allowed to highlight the presence of a robust hidden Fermi liquid charge transport in the low temperature properties of infinite layer electron doped cuprate superconductors.

We systematically investigate the role of defects, introduced by varying synthesis conditions and by carrying out ion irradiation treatments, on the structural and ferroelectric properties of commensurately strained bismuth ferrite BixFe2-xO3 layers grown on SrRuO3-coated DyScO3(110)o substrates using adsorption-controlled ozone molecular-beam epitaxy. Our findings highlight ion irradiation as an effective approach for reducing through-layer electrical leakage, a necessary condition for the development of reliable ferroelectrics-based electronics. © 2019 Author(s).

Single-crystal materials with sufficiently low crystal symmetry and strong spin-orbit interactions can be used to generate novel forms of spin-orbit torques on adjacent ferromagnets, such as the out-of-plane antidamping torque previously observed in WTe2/ferromagnet heterostructures. Here, we present measurements of spin-orbit torques produced by the low-symmetry material β-MoTe2, which, unlike WTe2, retains bulk inversion symmetry.