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Pressure-controlled interlayer magnetism in atomically thin CrI3

Cornell Affiliated Author(s)

Author

T. Li
S. Jiang
N. Sivadas
Z. Wang
Y. Xu
D. Weber
J.E. Goldberger
K. Watanabe
T. Taniguchi
C.J. Fennie
Fai Mak
J. Shan

Abstract

Stacking order can influence the physical properties of two-dimensional van der Waals materials1,2. Here we applied hydrostatic pressure up to 2 GPa to modify the stacking order in the van der Waals magnetic insulator CrI3. We observed an irreversible interlayer antiferromagnetic-to-ferromagnetic transition in atomically thin CrI3 by magnetic circular dichroism and electron tunnelling measurements. The effect was accompanied by a monoclinic-to-rhombohedral stacking-order change characterized by polarized Raman spectroscopy. Before the structural change, the interlayer antiferromagnetic coupling energy can be tuned up by nearly 100% with pressure. Our experiment reveals the interlayer ferromagnetic ground state, which is established in bulk CrI3 but not observed in native exfoliated thin films. The observed correlation between the magnetic ground state and the stacking order is in good agreement with first principles calculations3–8 and suggests a route towards nanoscale magnetic textures by moiré engineering3,9. © 2019, The Author(s), under exclusive licence to Springer Nature Limited.

Date Published

Journal

Nature Materials

Volume

18

Issue

12

Number of Pages

1303-1308,

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85074653252&doi=10.1038%2fs41563-019-0506-1&partnerID=40&md5=5a7d4d7eab94ba65b7c42c9b17de6bfb

DOI

10.1038/s41563-019-0506-1

Group (Lab)

Jie Shan Group
Kin Fai Mak Group

Funding Source

1719875
N00014-18-1-2368
W911NF-17-1-0605
DMR-1719875
DMR-1420451
WE6480/1
JPMJCR15F3

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