Spin-orbit torque (SOT) is a promising mechanism for writing magnetic memories, while field-effect transistors (FETs) are the gold-standard device for logic operation. The spin-orbit torque field-effect transistor (SOTFET) is a proposed device that couples an SOT-controlled ferromagnet to a semiconducting transistor channel via the transduction in a magnetoelectric multiferroic (MF). This allows the SOTFET to operate as both a memory and a logic device, but its realization depends on the choice of appropriate materials. In this report, we discuss and parametrize the types of materials that can lead to an SOTFET heterostructure. © 2014 IEEE.