The strong excitonic effect in monolayer transition metal dichalcogenide (TMD) semiconductors has enabled many fascinating light-matter interaction phenomena. Examples include strongly coupled exciton-polaritons and nearly perfect atomic monolayer mirrors. The strong light-matter interaction also opens the door for dynamical control of mechanical motion through the exciton resonance of monolayer TMDs. Here, we report the observation of exciton-optomechanical coupling in a suspended monolayer MoSe2 mechanical resonator.

Shape-memory actuators allow machines ranging from robots to medical implants to hold their form without continuous power, a feature especially advantageous for situations where these devices are untethered and power is limited. Although previous work has demonstrated shape-memory actuators using polymers, alloys, and ceramics, the need for micrometer-scale electro–shape-memory actuators remains largely unmet, especially ones that can be driven by standard electronics ( 1 volt).

Experiments on graphene bilayers, where the top layer is rotated with respect to the one below, have displayed insulating behavior when the moiré bands are partially filled. We calculate the charge distributions in these phases, and estimate the excitation gaps. © 2021 authors. Published by the American Physical Society.

We use kinetic theory to model the dynamics of a small Bose condensed cloud of heavy particles moving through a larger degenerate Fermi gas of light particles. Varying the Bose-Fermi interaction, we find a crossover between bulk- and surface-dominated regimes - where scattering occurs throughout the Bose cloud or solely on the surface, respectively. We calculate the damping and frequency shift of the dipole mode in a harmonic trap as a function of the magnetic field controlling an interspecies Feshbach resonance.

Superfluid 3He, with unconventional spin-triplet p-wave pairing, provides a model system for topological superconductors, which have attracted significant interest through potential applications in topologically protected quantum computing. In topological insulators and quantum Hall systems, the surface/edge states, arising from bulk-surface correspondence and the momentum space topology of the band structure, are robust.

Although often ignored in first-principles studies of material behavior, electronic free energy can have a profound effect in systems with a high-temperature threshold for kinetics and a high Fermi-level density of states (DOS). Nb3Sn and many other members of the technologically important A15 class of superconductors meet these criteria. This is no coincidence: both electronic free energy and superconducting transition temperature Tc are closely linked to the electronic density of states at the Fermi level.

We consider quantum many body systems with generalized symmetries, such as the higher form symmetries introduced recently, and the 'tensor symmetry'. We consider a general form of lattice Hamiltonians which allow a certain level of nonlocality. Based on the assumption of dual generalized symmetries, we explicitly construct low energy excited states. We also derive the 't Hooft anomaly for the general Hamiltonians after 'gauging' the dual generalized symmetries.

Mamyshev oscillators can generate high-power femtosecond pulses, but starting a mode-locked state has remained a major challenge due to the suppression of continuous-wave lasing. Here, we study the starting dynamics of a linear Mamyshev oscillator designed to generate high-power femtosecond pulses while avoiding component damage. Reliable starting to stable mode-locking is achieved with a combination of modulation of the pump power and shifting of a filter passband. The starting process is automated, with full electronic control.

Bandgap engineering is central to the design of heterojunction devices. For heterojunctions involving monolayer-thick materials like MoS2, the carrier concentration of the atomically thin film can vary significantly depending on the amount of charge transfer between MoS2 and the substrate. This makes substrates with a range of charge neutrality levels - as is the case for complex oxide substrates - a powerful addition to electrostatic gating or chemical doping to control the doping of overlying MoS2 layers.