Publications
High frequency MoS2 nanomechanical resonators
Molybdenum disulfide (MoS2), a layered semiconducting material in transition metal dichalcogenides (TMDCs), as thin as a monolayer (consisting of a hexagonal plane of Mo atoms covalently bonded and sandwiched between two planes of S atoms, in a trigonal prismatic structure), has demonstrated unique properties and strong promises for emerging two-dimensional (2D) nanodevices.
Size dependence of two-photon absorption in semiconductor quantum dots
Quantum confinement plays an important role in the optical properties of semiconductor quantum dots (QDs). In this work, we combine experiment and modeling to systematically investigate the size dependence of the degenerate two-photon absorption (TPA) of below-band-gap radiation in CdSe QDs. The TPA coefficient β at 800 nm of CdSe QDs of varying radii was measured using femtosecond white-light transient absorption spectroscopy by probing the pump-induced bleaching at the first exciton transition energy.
Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2
We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ∼70 meV per percent applied strain for direct gap transitions, and at a rate 1.6 times larger for indirect gap transitions, has been determined by absorption and photoluminescence spectroscopy. Our result, in excellent agreement with first principles calculations, demonstrates the potential of two-dimensional crystals for applications in flexible electronics and optoelectronics. © 2013 American Chemical Society.
Progress, challenges, and opportunities in two-dimensional materials beyond graphene
Graphene's success has shown that it is possible to create stable, single and few-atom-thick layers of van der Waals materials, and also that these materials can exhibit fascinating and technologically useful properties. Here we review the state-of-the-art of 2D materials beyond graphene. Initially, we will outline the different chemical classes of 2D materials and discuss the various strategies to prepare single-layer, few-layer, and multilayer assembly materials in solution, on substrates, and on the wafer scale.
Orientation of luminescent excitons in layered nanomaterials
In nanomaterials, optical anisotropies reveal a fundamental relationship between structural and optical properties. Directional optical properties can be exploited to enhance the performance of optoelectronic devices, optomechanical actuators and metamaterials. In layered materials, optical anisotropies may result from in-plane and out-of-plane dipoles associated with intra- and interlayer excitations, respectively. Here, we resolve the orientation of luminescent excitons and isolate photoluminescence signatures arising from distinct intra- and interlayer optical transitions.
Tightly bound trions in monolayer MoS 2
Two-dimensional (2D) atomic crystals, such as graphene and transition-metal dichalcogenides, have emerged as a new class of materials with remarkable physical properties. In contrast to graphene, monolayer MoS 2 is a non-centrosymmetric material with a direct energy gap. Strong photoluminescence, a current on/off ratio exceeding 10 8 in field-effect transistors, and efficient valley and spin control by optical helicity have recently been demonstrated in this material.
Effect of cation sublattice ordering on structure and raman scattering of znGeN2
The semiconductor ZnGeN2 was grown by a vapor-liquid-solid mechanism. Ordering of the Zn-Ge sublattice with growth temperature and Zn partial pressure was investigated by powder X-ray diffraction and was found to be sensitive to the growth temperature and insensitive, over the range explored, to the Zn and NH3 partial pressures. The degree of disorder on the cation sublattice was observed to correlate with the suppression of predicted Raman peaks and the emergence of phonon density-of-states features. © 2013 Materials Research Society.
Co-extruded multilayer films for high capacity optical data storage
New approaches for optical data storage (ODS) applications are needed to meet the future requirements of applications in multimedia, archiving, security, and many others. Commercial data storage technologies are moving to threedimensional (3D) materials, but the capacity is limited by the fabrication cost and the number of layers that can be addressed using the reflection-based storage mechanism. We demonstrate here storage systems based on co-extrusion of multilayer (ML) films that can overcome these problems.
Roll-to-roll fabrication of multilayer films for high capacity optical data storage
3D Optical data storage is demonstrated in co-extruded multilayer films using organic materials. Co-extrusion is able to produce films on a much larger scale at a much lower cost than current methods. The material compatibility and mechanical flexibility allow for new data formats with higher capacities to be realized. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Carrier dynamics in Si nanowires fabricated by metal-assisted chemical etching
Silicon nanowire arrays fabricated by metal-assisted wet chemical etching have emerged as a promising architecture for solar energy harvesting applications. Here we investigate the dynamics and transport properties of photoexcited carriers in nanowires derived from an intrinsic silicon wafer using the terahertz (THz) time-domain spectroscopy. Both the dynamics and the pump fluence dependence of the photoinduced complex conductivity spectra up to several THz were measured.