The semiconductor ZnGeN2 was grown by a vapor-liquid-solid mechanism. Ordering of the Zn-Ge sublattice with growth temperature and Zn partial pressure was investigated by powder X-ray diffraction and was found to be sensitive to the growth temperature and insensitive, over the range explored, to the Zn and NH3 partial pressures. The degree of disorder on the cation sublattice was observed to correlate with the suppression of predicted Raman peaks and the emergence of phonon density-of-states features. © 2013 Materials Research Society.