We analyze the structural and magnetic characteristics of (111)-oriented lutetium iron garnet (Lu3Fe5O12) films grown by molecular-beam epitaxy, for films as thin as 2.8 nm. Thickness-dependent measurements of the in- and out-of-plane ferromagnetic resonance allow us to quantify the effects of two-magnon scattering, along with the surface anisotropy and the saturation magnetization.

We report measurements of the thickness and temperature (T) dependencies of current-induced spin-orbit torques, especially the fieldlike (FL) component, in various heavy metal (HM)/normal metal (NM) spacer/ferromagnet (FM)/oxide (MgO and HfOx/MgO) heterostructures. The FL torque in these samples originates from spin current generated by the spin Hall effect in the HM.

We investigate fast-pulse switching of in-plane-magnetized magnetic tunnel junctions (MTJs) within 3-terminal devices in which spin-transfer torque is applied to the MTJ by the giant spin Hall effect. We measure reliable switching, with write error rates down to 10-5, using current pulses as short as just 2 ns in duration.

We demonstrate that the magneto-optic-Kerr effect with normal light incidence can be used to obtain quantitative optical measurements of both components of spin-orbit-induced torque (both the antidamping and effective-field components) in heavy-metal/ferromagnet bilayers. This is achieved by analyzing the quadratic Kerr effect as well as the polar Kerr effect. The two effects can be distinguished by properly selecting the polarization of the incident light.

Superconducting QUantum Interference Device (SQUID) microscopy has excellent magnetic field sensitivity, but suffers from modest spatial resolution when compared with other scanning probes. This spatial resolution is determined by both the size of the field sensitive area and the spacing between this area and the sample surface. In this paper we describe scanning SQUID susceptometers that achieve sub-micron spatial resolution while retaining a white noise floor flux sensitivity of ≈2μΦ0/Hz1/2.

With the decrease of the dimensions of electronic devices, the role played by electrical contacts is ever increasing, eventually coming to dominate the overall device volume and total resistance. This is especially problematic for monolayers of semiconducting transition-metal dichalcogenides (TMDs), which are promising candidates for atomically thin electronics. Ideal electrical contacts to them would require the use of similarly thin electrode materials while maintaining low contact resistances.

Effectively manipulating magnetism in ferromagnet (FM) thin-film nanostructures with an in-plane current has become feasible since the determination of a "giant" spin Hall effect (SHE) in certain heavy metal/FM systems. Recently, both theoretical and experimental reports indicate that metallic antiferromagnet materials can have both a large anomalous Hall effect and a strong SHE. Here we report a systematic study of the SHE in PtMn with several PtMn/FM systems.

We report that the spin Hall torque generated by Pt can be enhanced substantially by alloying with Al or Hf. We observe damping-like spin torque efficiency per unit applied current density as high as ξDLj=0.23±0.02, nearly twice the maximum value reported for pure Pt. To achieve this maximum efficiency, a very thin (0.5 nm) Pt spacer layer is inserted between the alloy and the ferromagnet being manipulated, to avoid a degraded spin transparency at the alloy/ferromagnet interface. © 2016 Author(s).

Magnetic devices are a leading contender for the implementation of memory and logic technologies that are non-volatile, that can scale to high density and high speed, and that do not wear out. However, widespread application of magnetic memory and logic devices will require the development of efficient mechanisms for reorienting their magnetization using the least possible current and power. Until recently, the most-efficient known mechanism for manipulating magnetization in practical device geometries was spin-transfer torque from a spin-polarized current.

We demonstrate that in-plane charge current can effectively control the spin precession resonance in an Al2O3/CoFeB/Ta heterostructure. Brillouin light scattering was used to detect the ferromagnetic resonance field under microwave excitation of spin waves at fixed frequencies. The current control of spin precession resonance originates from modification of the in-plane uniaxial magnetic anisotropy field Hk, which changes symmetrically with respect to the current direction.