Uncompensated moments (UMs) in antiferromagnets are responsible for exchange bias in antiferromagnet/ ferromagnet heterostructures; however, they are difficult to directly detect because any signal they contribute is typically overwhelmed by the ferromagnetic layer. We use magnetothermal microscopy to image micron-scale uncompensated moments in thin films of FeRh, a room-temperature antiferromagnet that exhibits a first-order phase transition to a ferromagnetic (FM) state near 400 K.

Spin-orbit torque (SOT) is a promising mechanism for writing magnetic memories, while field-effect transistors (FETs) are the gold-standard device for logic operation. The spin-orbit torque field-effect transistor (SOTFET) is a proposed device that couples an SOT-controlled ferromagnet to a semiconducting transistor channel via the transduction in a magnetoelectric multiferroic (MF). This allows the SOTFET to operate as both a memory and a logic device, but its realization depends on the choice of appropriate materials.

This article introduces a circuits model for a proposed spin-based device called a spin-orbit torque field-effect transistor (SOTFET) that can operate as a nonvolatile memory and logic device. The SOTFET utilizes an FET structure with a ferromagnetic-multiferroic (MF) gate-stack that enables read/compute and write functions to be isolated. This is achieved by a combination of a ferromagnetic layer that is programmable via spin-orbit torque coupled to an MF layer that also couples into the gate of a traditional FET.

We systematically investigate the role of defects, introduced by varying synthesis conditions and by carrying out ion irradiation treatments, on the structural and ferroelectric properties of commensurately strained bismuth ferrite BixFe2-xO3 layers grown on SrRuO3-coated DyScO3(110)o substrates using adsorption-controlled ozone molecular-beam epitaxy. Our findings highlight ion irradiation as an effective approach for reducing through-layer electrical leakage, a necessary condition for the development of reliable ferroelectrics-based electronics. © 2019 Author(s).

Single-crystal materials with sufficiently low crystal symmetry and strong spin-orbit interactions can be used to generate novel forms of spin-orbit torques on adjacent ferromagnets, such as the out-of-plane antidamping torque previously observed in WTe2/ferromagnet heterostructures. Here, we present measurements of spin-orbit torques produced by the low-symmetry material β-MoTe2, which, unlike WTe2, retains bulk inversion symmetry.

Measuring the behavior of redox-active molecules in space and time is crucial for understanding chemical and biological systems and for developing new technologies. Optical schemes are noninvasive and scalable, but usually have a slow response compared to electrical detection methods. Furthermore, many fluorescent molecules for redox detection degrade in brightness over long exposure times. Here, we show that the photoluminescence of “pixel” arrays of monolayer MoS2 can image spatial and temporal changes in redox molecule concentration.

As electrical control of Neél order opens the door to reliable antiferromagnetic spintronic devices, understanding the microscopic mechanisms of antiferromagnetic switching is crucial. Spatially resolved studies are necessary to distinguish multiple nonuniform switching mechanisms; however, progress has been hindered by the lack of tabletop techniques to image the Neél order. We demonstrate spin Seebeck microscopy as a sensitive tabletop method for imaging antiferromagnetism in thin films and apply this technique to study spin-torque switching in Pt/NiO and Pt/NiO/Pt heterostructures.

Equation (4) in the original paper contains an incorrect factor of α in the second term of the numerator. The correct equation should be as follows: (Formula Presented). This is a purely typographical error and does not affect any other part of the paper or the analysis. We thank Professor A. Manchon for bringing this error to our attention. © 2019 American Physical Society.

The discovery of atomic monolayer magnetic materials has triggered significant interest in the magnetism/spintronics and 2D van der Waals materials communities. Here we review recent progress in this rapidly growing field. We survey the physical properties of the large class of layered magnetic materials, and discuss recent advances in the study of these materials in the 2D limit.

Spin-orbit coupling (SOC), the interaction between the electron spin and the orbital angular momentum, can unlock rich phenomena at interfaces, in particular interconverting spin and charge currents. Conventional heavy metals have been extensively explored due to their strong SOC of conduction electrons. However, spin-orbit effects in classes of materials such as epitaxial 5d-electron transition-metal complex oxides, which also host strong SOC, remain largely unreported.