Publications
Manipulation of the van der Waals Magnet Cr2Ge2Te6 by Spin–Orbit Torques
We report measurements of current-induced thermoelectric and spin-orbit torque effects within devices in which multilayers of the semiconducting two-dimensional van der Waals magnet Cr2Ge2Te6 (CGT) are integrated with Pt and Ta metal overlayers. We show that the magnetic orientation of the CGT can be detected accurately either electrically (using an anomalous Hall effect) or optically (using magnetic circular dichroism) with good consistency.
Electrical switching of valley polarization in monolayer semiconductors
Achieving on-demand control of the valley degree of freedom is essential for valley-based information science and technology. Optical and magnetic control of the valley degree of freedom in monolayer transition-metal dichalcogenide (TMD) semiconductors has been studied extensively. However, electrical control of the valley polarization has remained a challenge. Here we demonstrate switching of the valley polarization in monolayer WSe2 by electrical gating. This is achieved by coupling a WSe2 monolayer to a two-dimensional (2D) layered magnetic insulator CrI3.
Probing magnetic exchange fields by quantum emitters in a gate-tunable WSe2/ferromagnet-coupled system
Solid-state quantum emitters can be used as nanoscale optical transducers in quantum metrology. Here, we present a technique to probe voltage controlled magnetic exchange fields with a quantum emitter embedded in a WSe2/ferromagnet heterostrucutre. © OSA 2020.
Spectral and spatial isolation of single tungsten diselenide quantum emitters using hexagonal boron nitride wrinkles
Monolayer WSe2 hosts bright single-photon emitters. Because of its compliance, monolayer WSe2 conforms to patterned substrates without breaking, thus creating the potential for large local strain, which is one activation mechanism of its intrinsic quantum emitters. Here, we report an approach to creating spatially isolated quantum emitters from WSe2 monolayers that display clean spectra with little detrimental background signal.
Strain relaxation induced transverse resistivity anomalies in SrRu O3 thin films
Here, we report a magnetotransport study of high-quality SrRuO3 thin films with high residual resistivity ratios grown by reactive oxide molecular-beam epitaxy. The transverse resistivity exhibits clear anomalies which are typically believed to be signatures of the topological Hall effect and the presence of magnetic skyrmions.
Gate-tunable spin waves in antiferromagnetic atomic bilayers
Remarkable properties of two-dimensional (2D) layer magnetic materials, which include spin filtering in magnetic tunnel junctions and the gate control of magnetic states, were demonstrated recently1–12. Whereas these studies focused on static properties, dynamic magnetic properties, such as excitation and control of spin waves, remain elusive. Here we investigate spin-wave dynamics in antiferromagnetic CrI3 bilayers using an ultrafast optical pump/magneto-optical Kerr probe technique.
Simulation of Hubbard model physics in WSe2/WS2 moiré superlattices
The Hubbard model, formulated by physicist John Hubbard in the 1960s1, is a simple theoretical model of interacting quantum particles in a lattice. The model is thought to capture the essential physics of high-temperature superconductors, magnetic insulators and other complex quantum many-body ground states2,3. Although the Hubbard model provides a greatly simplified representation of most real materials, it is nevertheless difficult to solve accurately except in the one-dimensional case2,3.
Magneto-Memristive Switching in a 2D Layer Antiferromagnet
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When the underlying material exhibits additional charge or spin order, the resistive states can be directly coupled, further allowing electrical control of the collective phases. The observation of abrupt, memristive switching of tunneling current in nanoscale junctions of ultrathin CrI3, a natural layer antiferromagnet, is reported here.
Pressure-controlled interlayer magnetism in atomically thin CrI3
Stacking order can influence the physical properties of two-dimensional van der Waals materials1,2. Here we applied hydrostatic pressure up to 2 GPa to modify the stacking order in the van der Waals magnetic insulator CrI3. We observed an irreversible interlayer antiferromagnetic-to-ferromagnetic transition in atomically thin CrI3 by magnetic circular dichroism and electron tunnelling measurements. The effect was accompanied by a monoclinic-to-rhombohedral stacking-order change characterized by polarized Raman spectroscopy.
Layer-dependent spin-orbit torques generated by the centrosymmetric transition metal dichalcogenide β−MoTe2
Single-crystal materials with sufficiently low crystal symmetry and strong spin-orbit interactions can be used to generate novel forms of spin-orbit torques on adjacent ferromagnets, such as the out-of-plane antidamping torque previously observed in WTe2/ferromagnet heterostructures. Here, we present measurements of spin-orbit torques produced by the low-symmetry material β-MoTe2, which, unlike WTe2, retains bulk inversion symmetry.