We demonstrate a mechanism for magnetoresistance oscillations in insulating states of two-dimensional (2D) materials arising from the interaction of the 2D layer and proximal graphite gates. We study a series of devices based on different 2D systems, including mono- and bilayer Td-WTe2, MoTe2/WSe2 moiré heterobilayers, and Bernal-stacked bilayer graphene, which all share a similar graphite-gated geometry.

The design and control of material interfaces is a foundational approach to realize technologically useful effects and engineer material properties. This is especially true for two-dimensional (2D) materials, where van der Waals stacking allows disparate materials to be freely stacked together to form highly customizable interfaces. This has underpinned a recent wave of discoveries based on excitons in stacked double layers of transition metal dichalcogenides (TMDs), the archetypal family of 2D semiconductors.

Excitonic insulators (EIs) arise from the formation of bound electron–hole pairs (excitons)1,2 in semiconductors and provide a solid-state platform for quantum many-boson physics3–8. Strong exciton–exciton repulsion is expected to stabilize condensed superfluid and crystalline phases by suppressing both density and phase fluctuations8–11. Although spectroscopic signatures of EIs have been reported6,12–14, conclusive evidence for strongly correlated EI states has remained elusive.

Ferromagnetism in two-dimensional materials presents a promising platform for the development of ultrathin spintronic devices with advanced functionalities. Recently discovered ferromagnetic van der Waals crystals such as CrI3, readily isolated two-dimensional crystals, are highly tunable through external fields or structural modifications. However, there remains a challenge because of material instability under air exposure. Here, we report the observation of an air-stable and layer-dependent ferromagnetic (FM) van der Waals crystal, CrPS4, using magneto-optic Kerr effect microscopy.

Van der Waals moiré materials have emerged as a highly controllable platform to study electronic correlation phenomena1–17. Robust correlated insulating states have recently been discovered at both integer and fractional filling factors of semiconductor moiré systems10–17. In this study we explored the thermodynamic properties of these states by measuring the gate capacitance of MoSe2/WS2 moiré superlattices. We observed a series of incompressible states for filling factors 0–8 and anomalously large capacitance in the intervening compressible regions.

The evolution of a Landau Fermi liquid into a non-magnetic Mott insulator with increasing electronic interactions is one of the most puzzling quantum phase transitions in physics1–6. The vicinity of the transition is believed to host exotic states of matter such as quantum spin liquids4–7, exciton condensates8 and unconventional superconductivity1. Semiconductor moiré materials realize a highly controllable Hubbard model simulator on a triangular lattice9–22, providing a unique opportunity to drive a metal–insulator transition (MIT) via continuous tuning of the electronic interactions.

The strong Ising spin–orbit coupling in certain two-dimensional transition metal dichalcogenides can profoundly affect the superconducting state in few-layer samples. For example, in NbSe2, this effect combines with the reduced dimensionality to stabilize the superconducting state against magnetic fields up to 35 T, and could lead to topological superconductivity. Here we report a two-fold rotational symmetry of the superconducting state in few-layer NbSe2 under in-plane external magnetic fields, in contrast to the three-fold symmetry of the lattice.

Stripe phases, in which the rotational symmetry of charge density is spontaneously broken, occur in many strongly correlated systems with competing interactions1–11. However, identifying and studying such stripe phases remains challenging. Here we uncover stripe phases in WSe2/WS2 moiré superlattices by combining optical anisotropy and electronic compressibility measurements. We find strong electronic anisotropy over a large doping range peaked at 1/2 filling of the moiré superlattice. The 1/2 state is incompressible and assigned to an insulating stripe crystal phase.

Two-dimensional (2D) magnetic materials have attracted much recent interest with unique properties emerging at the few-layer limit. Beyond the reported impacts on the static magnetic properties, the effects of reducing the dimensionality on the magnetization dynamics are also of fundamental interest and importance for 2D device development. In this report, we investigate the spin dynamics in atomically thin antiferromagnetic FePS3 of varying layer numbers using ultrafast pump-probe spectroscopy.

Moiré superlattices of two-dimensional van der Waals materials have emerged as a powerful platform for designing electronic band structures and discovering emergent physical phenomena. A key concept involves the creation of long-wavelength periodic potential and moiré bands in a crystal through interlayer electronic hybridization or atomic corrugation when two materials are overlaid. Here we demonstrate a new approach based on spatially periodic dielectric screening to create moiré bands in a monolayer semiconductor.