We have developed a technique for making low-resistance end-current injection contacts to geometrically, electronically, and mechanically anisotropic crystals of charge-density-wave (CDW) conductors. Transport measurements on Nb Se3 show that contact resistances are reduced by nearly 2 orders of magnitude compared with the standard side-contact geometry, and yield qualitatively similar results for the contact-sensitive phase-slip process. This end-contact technique should be useful for characterizing collective transport in fully gapped CDW conductors such as Ta S3, for studying CDW physics on scales smaller than 10 μm, and more broadly for characterizing other materials with large electronic and mechanical anisotropies. © 2008 The American Physical Society.