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Piezoresistive transduction in multilayer polycrystalline silicon resonators

Cornell Affiliated Author(s)

Author

J.D. Cross
B.R. Ilic
M.K. Zalalutdinov
W. Zhou
J.W. Baldwin
B.H. Houston
H.G. Craighead
J.M. Parpia

Abstract

We demonstrate piezoresistive transduction of mechanical motion from out-of-plane flexural micromechanical resonators made from stacked thin films. The resonators are fabricated from two highly doped polycrystalline silicon layers separated by an interlayer dielectric. We examine two interlayer materials: thermal silicon dioxide and stoichiometric silicon nitride. We show that via one-time dielectric breakdown, the film stack functions as a vertical piezoresistor effectively transducing the motion of the resonators. We obtain a gauge factor of ∼5, which is sufficient to detect the resonator motion. The simple film stack constitutes a vertically oriented piezoresistor that is readily integrated with micro- and nanoscale resonators. © 2009 American Institute of Physics.

Date Published

Journal

Applied Physics Letters

Volume

95

Issue

13

DOI

10.1063/1.3241077

Group (Lab)

Jeevak Parpia Group

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