Resonant RF MEMS structures can offer excellent performance for integrated sensing and RF signal processing applications. MEMS devices offer small size and low power consumption and improved physical parameters such as FQ product; however, significant impediments to a large scale commercial adoption include: production cost, difficulty of implementation and signal transduction. In this paper, we developed a generic pathway for CMOS-MEMS integration by designing MEMS dome resonators in multiple layers of stacked polycrystalline silicon in standard CMOS back end of line process and demonstrate the quality factor of dome resonator both optically and electrically. In this work, we report the highest FQ product of integrated resonator at micron level using commercial CMOS technology and the lowest operation power. © 2009 Elsevier B.V. All rights reserved.