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Strong gate coupling of high-Q nanomechanical resonators

Cornell Affiliated Author(s)

Author

J. Sulkko
Mika Sillanpää
Pasi Häkkinen
L. Lechner
M. Helle
A. Fefferman
J. Parpia
P.J. Hakonen

Abstract

The detection of mechanical vibrations near the quantum limit is a formidable challenge since the displacement becomes vanishingly small when the number of phonon quanta tends toward zero. An interesting setup for on-chip nanomechanical resonators is that of coupling them to electrical microwave cavities for detection and manipulation. Here we show how to achieve a large cavity coupling energy of up to (2π) 1 MHz/nm for metallic beam resonators at tens of megahertz. We used focused ion beam (FIB) cutting to produce uniform slits down to 10 nm, separating patterned resonators from their gate electrodes, in suspended aluminum films. We measured the thermomechanical vibrations down to a temperature of 25 mK, and we obtained a low number of about 20 phonons at the equilibrium bath temperature. The mechanical properties of Al were excellent after FIB cutting, and we recorded a quality factor of Q ∼ 3 × 105 for a 67 MHz resonator at a temperature of 25 mK. Between 0.2 and 2 K we find that the dissipation is linearly proportional to the temperature. © 2010 American Chemical Society.

Date Published

Journal

Nano Letters

Volume

10

Issue

12

Number of Pages

4884-4889,

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-78650087300&doi=10.1021%2fnl102771p&partnerID=40&md5=6360fe6ec5aa5a4c94cf8e59991bd6d5

DOI

10.1021/nl102771p

Group (Lab)

Jeevak Parpia Group

Funding Source

0908634
240387

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