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Ultrafast photocurrent measurement of the escape time of electrons and holes from carbon nanotube p-i-n photodiodes

Cornell Affiliated Author(s)

Author

N.M. Gabor
Z. Zhong
K. Bosnick
P.L. McEuen

Abstract

Ultrafast photocurrent measurements are performed on individual carbon nanotube p-i-n photodiodes. The photocurrent response to subpicosecond pulses separated by a variable time delay Δt shows strong photocurrent suppression when two pulses overlap (Δt=0). The picosecond-scale decay time of photocurrent suppression scales inversely with the applied bias V SD, and is twice as long for photon energy above the second subband E 22 as compared to lower energy. The observed photocurrent behavior is well described by an escape time model that accounts for carrier effective mass. © 2012 American Physical Society.

Date Published

Journal

Physical Review Letters

Volume

108

Issue

8

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84857589595&doi=10.1103%2fPhysRevLett.108.087404&partnerID=40&md5=913ca19caedcb859d28365e23c0a9186

DOI

10.1103/PhysRevLett.108.087404

Group (Lab)

Paul McEuen Group

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