Ultrafast photocurrent measurement of the escape time of electrons and holes from carbon nanotube p-i-n photodiodes
Abstract
Ultrafast photocurrent measurements are performed on individual carbon nanotube p-i-n photodiodes. The photocurrent response to subpicosecond pulses separated by a variable time delay Δt shows strong photocurrent suppression when two pulses overlap (Δt=0). The picosecond-scale decay time of photocurrent suppression scales inversely with the applied bias V SD, and is twice as long for photon energy above the second subband E 22 as compared to lower energy. The observed photocurrent behavior is well described by an escape time model that accounts for carrier effective mass. © 2012 American Physical Society.
Date Published
Journal
Physical Review Letters
Volume
108
Issue
8
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84857589595&doi=10.1103%2fPhysRevLett.108.087404&partnerID=40&md5=913ca19caedcb859d28365e23c0a9186
DOI
10.1103/PhysRevLett.108.087404
Research Area
Group (Lab)
Paul McEuen Group