Manipulating the valley pseudospin in MoS2 transistors
Abstract
Monolayer MoS2 possess a new valley-pseudospin degree of freedom besides electronic charge and spin. In this talk I will talk about our recent results on optical generation of valley polarization, based on which a novel Hall effect associated with the new degree of freedom is demonstrated. The mechanisms responsible for driving the new valley Hall effect will be discussed. © OSA 2015.
Date Published
Conference Name
Conference
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84935119527&doi=10.1364%2fCLEO_QELS.2015.FM3B.3&partnerID=40&md5=dc7cdb52f60443f807b856f3183a9716
DOI
10.1364/CLEO_QELS.2015.FM3B.3
Research Area
Group (Lab)
Kin Fai Mak Group