Magnetic tunnel junctions with single-layer-graphene tunnel barriers
Abstract
We report on the fabrication and characterization of magnetic tunnel junctions consisting of a single layer of graphene as the tunnel barrier, sandwiched between two metallic ferromagnetic electrodes. We employ a fabrication process chosen to minimize oxidation of the electrode materials at the ferromagnet/graphene interfaces. The devices have low resistance-area products of 1.5-6 m2, with low-temperature magnetoresistances of 1.5-3.4%. The temperature and bias dependencies of the resistance confirm that transport is dominated by tunneling processes rather than by any unintended pinholes. © 2014 American Physical Society.
Date Published
Journal
American Physical Society (APS)
Volume
89
Issue
18
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84902209530&doi=10.1103%2fPhysRevB.89.184418&partnerID=40&md5=1147364c5b0eb224f65bff41d159b2dd
DOI
10.1103/PhysRevB.89.184418
Research Area
Group (Lab)
Funding Source
DMR-1010768
DMR-1120296
1010768