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Nanosecond magnetization dynamics during spin Hall switching of in-plane magnetic tunnel junctions

Cornell Affiliated Author(s)

Author

G. Rowlands
Sriharsha Aradhya
S. Shi
E. Yandel
J. Oh
D. Ralph
Robert Buhrman

Abstract

We present a study of the magnetic dynamics associated with nanosecond scale magnetic switching driven by the spin Hall effect in 3-terminal nanoscale magnetic tunnel junctions (MTJs) with in-plane magnetization. Utilizing fast pulse measurements in a variety of material stacks and detailed micromagnetic simulations, we demonstrate that this unexpectedly fast and reliable magnetic reversal is facilitated by the self-generated Oersted field, and that the short-pulse energy efficiency can be substantially enhanced by spatial non-uniformity in the initial magnetization of the magnetic free layer. The sign of the Oersted field is essential for this enhancement - in simulations in which we artificially impose a field-like torque with a sign opposite to the effect of the Oersted field, the result is a much slower and stochastic switching process that is reminiscent of the so-called incubation delay in conventional 2-terminal spin-torque-switched MTJs. © 2017 Author(s).

Date Published

Journal

AIP Publishing

Volume

110

Issue

12

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85016143743&doi=10.1063%2f1.4978661&partnerID=40&md5=f5ae162801b8ff2dd5729ad95b78c78c

DOI

10.1063/1.4978661

Funding Source

ECCS-0335765
0335765
W911NF-14-C0089
DMR-1120296

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